List of Publications

Num	Title	file
277	Transfer of GaN LEDs from sapphire to flexible substrates by laser lift-off and contact printing,J. Chun, Y. Hwang, Y. S. Choi, T. Jeong, J. H. Baek, H. C. Ko, and S. J. Park,IEEE Photonics Technol. Lett., 24(23), pp. 2115-2118, (2012)
276	Effect of internal electric field in well layer of InGaN/GaN multiple quantum well light-emitting diodes on efficiency droop,S. H. Han, D. Y. Lee, J. Y. Lim, J. W. Lee, D. J. Kim, Y. S. Kim, S. T. Kim, and S. J. Park,Jpn. J. Appl. Phys., 51, 100201, (2012)
275	Enhanced optical power of InGaN/GaN light-emitting diode by AlGaN interlayer and electron blocking layer,S. J. Lee, C. Y. Cho, S. H. Hong, S. H. Han, S. Yoon, S. T. Kim, and S. J. Park,IEEE Photonics Technol. Lett., 24(22), pp. 1991-1994, (2012)
274	Enhanced blue emission from InGaN quantum wells by surface plasmon in multi-walled carbon nanotubes,C.Y. Cho, S. J. Lee, S. H. Hong, J. J. Kim, W. Lim, S. T. Kim, and S. J. Park,ECS J. Solid State Sci. Technol., 1(5), pp. R140-R142, (2012)
273	Impact of near-stoichiometric silicon nitride gate insulator on the performance of MOCVD-grown ZnO thin-film transistors,K. Ramashan, Y. S. Choi, S. J. Park, and J. H. Jang,ECS J. Solid State Sci. Technol., 1(4), pp. Q70-Q78, (2012)
272	A comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells,I. K. Park, M. K. Kwon, and S. J. Park,J. Korean. Phys. Soc., 60(10), pp. 1666-1670, (2012)
271	Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices,M. Choe, C. Y. Cho, J. P. Shim, W. Park, S. K. Lim, W. K. Hong, B. H. Lee, D. S. Lee, S. J. Park, and T. H. Lee,Appl. Phys. Lett. 101, 031115, (2012)
270	Printable ultrathin substrates formed on a concave-convex underlayer for highly flexible membrane-type electrode stickers,Y. Hwang, H. A. Cho, S. H. Kim, H. S. Jang, Y. Hyun, J. Chun, S. J. Park, and H. C. Ko,Soft Matter, 8, pp. 7598-7603, (2012)
269	A self-assembled Ag nanoparticle agglomeration process on graphene for enhanced light output in GaN-based LEDs,J. P. Shim, D. H. Kim, M. H. Choe, T. H. Lee, S. J. Park, and D. S. Lee,Nanotechnology, 23, 255201, (2012)
268	Effect of VI/II gas ratio on the epitaxial growth of ZnO films by metalorganic chemical vapor deposition,Y. S. Choi, D. K. Hwang, B. J. Kwon, J. W. Kang, Y. H. Cho, and S. J. Park,Jpn. J. Appl. Phys., 50, 105502,(2011)

277

Transfer of GaN LEDs from sapphire to flexible substrates by laser lift-off and contact printing,J. Chun, Y. Hwang, Y. S. Choi, T. Jeong, J. H. Baek, H. C. Ko, and S. J. Park,IEEE Photonics Technol. Lett., 24(23), pp. 2115-2118, (2012)