List of Publications

Num	Title	file
237	Enhanced performance of silicon quantum dot light-emittting diodes grown on nanoroughened silicon substrate, B. H. Kim, R. F. Davis, C. H. Cho, and S. J. Park,Appl. Phys. Lett., 95, 073113,(2009)
236	Nanopatterned aluminum nitride template for high efficiency light-emitting diodes,S. M. Kim, T. Y. Park, S. J. Park, S. J. Lee, J. H. Baek, Y. C. Park, and G. Y. Jung,Opt. Express, 17(17), pp. 14791-14799,(2009)
235	Improvement of electrostatic discharge characteristics and optical properties of GaN-based light-emitting diodes,T. Y. Park, M. S. Oh, J. S. Meng, T. Lee, and S. J. Park,IEEE Electron Device Lett., 30(9), pp. 937-939,(2009)
234	Effect of electron blocking layer on efficiency droop in InGaN/GaN multiquantum well light-emitting diodes,S. H. Han, D. Y. Lee, S.J. Lee, C. Y. Cho, M. K. Kwon, S. P. Lee, D. Y. Noh, D. J. Kim, Y. C. Kim, and S. J. Park,Appl. Phys. Lett., 94, 231123,(2009)
233	The effect of localized surface plasmon on the photocurrent of silicon nanocrystal photodetectors,S. K. Kim, C. H. Cho, B. H. Kim, Y. S. Choi, S. J. Park, K. M. Lee, and S. G. Im,Appl. Phys. Lett., 94, 183108,(2009)
232	Size-dependent photocurrent of photodetectors with silicon nanocrystals,. K. Kim, B. H. Kim, C. H. Cho, and S. J. Park,Appl. Phys. Lett., 94, 183106,(2009)
231	Improving the performance of green LEDs by low- temperature annealing of p-GaN with PdZn,J. Y. Kim, M. K. Kwon, S. J. Park, S. Kim, J. W. Kim, Y. C. Kim,Electrochem. Solid State Lett., 12(5), pp. H185-H187(2009)
230	Improved performance of polymer light-emitting diodes with nanocomposites, A. M. Hussain, B. Neppolian, S. H. Kim, J. Y. Kim, H. C. Choi, K. Lee, S. J. Park, and A. J. Heeger,Appl. Phys. Lett., 94, 073306,(2009)
229	Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim,Appl. Phys. Lett., 94, 071118,(2009)
228	Improved leakage current, output power, and electrostatic discharge characteristics of GaN LEDs by chemical etching, T. Y. Park, C. H. Cho, I. K. Park, and S. J. Park,Electrochem. Solid State Lett., 12(1), pp. D3-D6,(2009)

237

Enhanced performance of silicon quantum dot light-emittting diodes grown on nanoroughened silicon substrate, B. H. Kim, R. F. Davis, C. H. Cho, and S. J. Park,Appl. Phys. Lett., 95, 073113,(2009)